The ideality factors, barrier heights, and serial resistance values are listed in Table 2.Figure 4F(V) versus V plots obtained from the experimental Sorafenib Tosylate cost I-V data in Figure 3.Table 2Ideality factor, barrier height, and series resistance values of the MIS structures.Figure 5 shows the forward bias logarithmic plots of the I-V characteristics for both of the structures. These curves are characterized by three distinct linear regions each indicating different conducting mechanisms. The curves present voltage dependence followed by power law dependence at higher voltage regions. This behavior can be attributed to space-charge-limited current (SCLC) [23, 24]. From the figure, it can be seen that the graphs have three distinct regions that change in the form of I��Vm.

It is obvious that the exponent m values are calculated from the slopes of these three different regions. The first region is characterized as the ohmic region (low bias region). The m values are 2.56 and 2.37 for the structures grown by CBD and sol-gel methods, respectively. Although these values are bigger than the unity, they are still close to the ohmic region, but in the second region, the m values were increased to 4.30 and 4.81. The high m value indicates that the SCLC mechanism is controlled by the presence of traps within the band gap of the CuO films. The third regions (high bias region) also indicate the SCLC mechanism, but in this case the m values decrease to lower values (2.60 for CBD and 3.26 for sol-gel methods). This is because the devices approach the ��trap-filled�� limits [23].

Figure 5The forward bias log (I) versus log (V) plots of the Au/CuO/p-Si/Al diodes from the data in Figure 3.4. Conclusion In the present work, we have fabricated Au/CuO/p-Si/Al MIS structures by using two different methods. The morphological and structural properties of the CuO films were investigated through SEM and XRD methods. The electronic parameters such as ideality factor, barrier height, and series resistance of the Schottky diodes were calculated and compared from the forward bias I-V and Norde’s plots. The SCLC theory was successfully applied to the produced diodes.From the SEM investigations, it was observed that the film grown by CBD method was found to be continuous and has distributed large grains covering the entire surface while the sol-gel grown structures were not continuous. According to the morphological investigations, we attributed that this discreetness affected the ideality factors and the barrier heights of our diodes.The XRD diffraction Batimastat patterns of both sample matched very well with the reference PDF cards. It was deduced that the crystallization was stronger in CBD method than in sol-gel method.